Design and Optimisation of Circular and Inductors for Silicon-based RFIC Application

Type : Publication
Auteur(s) :  ZIOUCHE Aicha, M. T. Belaroussi
Année :  2008
Domaine : Physique
Revue : African Physical Review
Résumé en PDF :  (résumé en pdf)
Fulltext en PDF :  (.pdf)
Mots clés :  circular inductor, high quality factors., RF application

Résumé : 

In this paper, spiral inductors for RF application, which are designed on a silicon substrate by using standards 0.35 µ m CMOS technology, are described. Analyzed and designed with ASITIC (a tool from the University of Berkeley), which accurately takes into account the parasitic effects. This study shows the possibility of obtaining an optimal inductance having a high quality factor of 15. This result is carried out without resorting to the specific processes such as the digging of the substrate under the inductors or the use of a thick layer in gold. The use of circular form, with optimization of geometrical parameters like spacing between two adjacent turn, the track width and the number of turns, can ensure high quality factors.