Oi and Cs Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications

Type : Publication
Auteur(s) :  Fayssal Boufelghab, Y. CHETTATE, S. BELHOUSSE
Année :  2016
Domaine : Physique
Revue : Universal Journal of Physics and Application
Résumé en PDF :  (résumé en pdf)
Fulltext en PDF :  (.pdf)
Mots clés :  Crystallization, mc-Si, HEM, FTIR, [Cs], [Oi]

Résumé : 

The objective of this work is determining the substitutional carbon ([Cs]) and interstitial oxygen ([Oi]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM). Some calculations of [Cs] and [Oi] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [Cs] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [Oi] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.