Modelling of a Cd1−xZnxTe/ZnTe Single Quantum Well for Laser Diodes

Auteurs :  S.Dehimi L.Dehimi T.Asar S.Özçelik
Année : 2017
Domaine : Physique
Type : Article de journal
Revue : Journal of Electronic Materials
Résumé en PDF :  (résumé en pdf)
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Mots clés : Quantum wells diode laser gain CdZnTe optoelectronics

Résumé : 

In this paper, the carrier density, temperature and quantum well width effect have been investigated for the optical gain for a Cd1−xZnxTe/ZnTe Zinc-blend strained quantum well structure. The device emits laser radiations in green–yellow–orange. Our results showed that the optical gain significantly increases with the increasing of the carrier density. It also increases with the decreasing of the Zn concentration, the well width and the temperature. In addition, the optimal threshold current density values were determined for three alloy compositions as 0.7, 0.8 and 0.9.