Modeling and simulation of In0.15 Ga0.85 N/GaN strainquantum well structure for solar cells application

Type : Article de conférence
Auteur(s) :  S. Dehimi, S. Kahla, A. Kellai, L.Kaba, N.Hammouda, A.Boutaghane
Année :  2018
Domaine : Physique
Conférence: The 6th International Conference on Welding, Non Destructive Testing and Materials and Alloys Industry (IC-WNDT-MI’18)
Lieu de la conférence:  Skikda, Algeria
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Mots clés :  Quantum well, solar cell, GaN, InGaN

Résumé : 

Quantum well solar cells based on III-V nitride semiconductor materials are a great technological interest by means to their physical and optical properties. In this study the effect of quantum well number on the characteristics (J-V), (P-V) and efficiency for the structure GaN/In 0.15 Ga0.85 N/ GaN was studied. our result showed that, the increase in the number of wells is accompanied by the increase of the light current density and the efficiency, for example with 50 wells we found Jight = 14(mA /cm2) and a efficiency 28%.