Chemical Synthesis and Characterization of nickel oxide as semiconductor thin film and doping agent of titanium dioxide

Auteurs :  A.BOUHANK, H.Serrar, Y.BELLAL
Année : 2018
Domaine : Chimie
Type : Communication
Conférence: International Conference on Materials Science (ICMS2018)
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Mots clés : NiO, TiO2, Dip coating, semiconductor

Résumé : 

Nickel oxide (NiO) is a p-type semiconductor , is an important material because of its large direct optical gap between 3.6 and 4.0 eV , of its chemical stability and magnetic device , and easy to deposit in thin film by several chemical techniques. However, it used as a dopant of titanium dioxide.NiO thin films were deposited by spray pyrolysis on ordinary glass substrates heated to a fixed temperature of 500 °C, from a nickel nitrate hexahydrate as a precursor dissolved in distilled water.Titanium dioxide is doped with deferent percentage of NiO, this latter was elaborate with the sol-gel method.The both type of thin film, were characterized by several techniques, Such as X-ray diffraction, scanning electron microscopy, optical absorption, Atomic force microscopy , and Raman spectroscopy.