SnS Thin Films Prepared by Chemical Spray Pyrolysis method

Type : Article de conférence
Auteur(s) :  M. MESSAOUDI, A. Derrouiche, M. Maiza, M.S. Aida, N. Attaf, H. Nezzari
Année :  2017
Domaine : Physique
Conférence: La 1ère Ecole d’Automne sur les Matériaux Emergents (EAME)
Lieu de la conférence:  Setif, Algeria
Résumé en PDF :  (résumé en pdf)
Fulltext en PDF :  (.pdf)
Mots clés :  Tin sulfide, solar cell, UV-visible, spary pyrolysis

Résumé : 

Tin sulfide (SnS) is interesting semiconductor that found application is several fields such as photovoltaic and gas sensor due to its interesting optical and electrical properties. In the present study, chemical spray pyrolysis deposition (CSP) was used to deposit tin sulfide (SnS) thin films onto glass substrates at 350°C. The starting solutions were prepared by the dilution of SnCl2 and thiourea in distilled water. The structural, optical and electrical, properties of the films were determined using X-ray diffraction, UV visible transmittance and Hall Effect measurements respectively. The influences of flow rate (10, 15 and 20 ml/h) in the structural, optical and electrical properties were determined. The XRD data confirms that the films prepared at low flow rate are a mixture of SnS and Sn2S3 phases. However, when the flow rate is increase; structures of the films are amorphous. From the UV-visible transmittance in the visible range we noticed that films optical band gap value ranged from 1.2 to 1.5 eV. The Hall Effect measurements indicate that SnS thin film exhibits p-type conduction with a conductivity decrease by two orders from 5.15x10-3 to 5.8x10-7 (?.cm)-1.