Calculation of IGBT power losses and junction temperature in inverter drive

Type : Article de conférence
Auteur(s) :  Ahcene Bouzida, Radia Abdelli, Ouadah M'hamed
Année :  2016
Domaine : Electrotechnique
Conférence: 8th International Conference on Modelling, Identification and Control (ICMIC)
Lieu de la conférence:  Aglerie
Résumé en PDF :  (résumé en pdf)
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Mots clés :  IGBT, Losses, thermal analysis

Résumé : 

Several techniques for estimating power losses in insulated-gate bipolar transistors (IGBTs), diodes and MOSFETs are known. Most of the approaches in the literature deal with PWM switching technique. In this paper presents a feasible loss model to estimate IGBT losses in a switching operation. The loss model is coupled to RC (Foster) Network using the Thermal Impedance. This paper investigates the power losses in IGBT's and associated Diodes as a function of the circuit and the temperature variation during operation. A full presentation of the electro-thermal model has been developed and simulated.