Teachers Login Form



Pupils Login Form


Properties of Al-doped ZnO thin films grown by pulsed laser deposition on Si (100) substrates

Auteurs : Fouad KERMICHE, Adel TAABOUCHE, Faouzi HANINI, Sarah MENAKH, Abderrahmane BOUABELLOU, Yacine BOUACHIBA, Tahar KERDJA, Chawki BENAZZOUZ, Mohamed BOUAFIA
Année : 2013
Domaine : Sciences des matériaux
Type : Publication
Revue : International Journal of Nanoparticles
Résumé en PDF : (résumé en pdf)
Fulltext en PDF : (.pdf)
Mots clés : ZnO, Al doping, pulsed laser deposition, PLD, X-ray diffraction, XRD, atomic force microscopy, AFM, Rutherford backscattering spectrometry, RBS, nanoparticles

Résumé :

Undoped and Al-doped ZnO (AZO) polycrystalline thin films (Al: 3, 5 at.%) have been deposited at 450°C onto Si(100) substrates by pulsed laser deposition method. A KrF excimer (248 nm, 25 ns, 2 J/cm2) was used as laser source. The study of the obtained undoped and Al-doped ZnO thin films has been accomplished using X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) techniques. The ZnO and AZO thin films deposited have been crystallised in hexagonal wurtzite-type structure with a strong (00.2) orientation. The grain sizes calculated from XRD patterns decrease from 38 to 26 nm with increasing Al doping. All nanoparticle thin films have a good surface morphology.