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Aluminium-induced crystallization ofamorphous silicon films deposited byDC magnetron sputtering on glasses

Auteurs : F. Kezzoula, A. Hammouda, M. Kechouane, P. Simon, S.E.H.Abaidia, A. Keffous, R. Cherfi, H. Menari, A. Manseri
Année : 2011
Domaine : Sciences des matériaux
Type : Publication
Revue : Applied Surface Science
Résumé en PDF : (résumé en pdf)
Fulltext en PDF : (.pdf)
Mots clés : Crystallization, Thin films, Hydrogenated amorphous silicon, AIC, Raman, XRD

Résumé :

Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by ther- mal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 ◦C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum- annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evi-dence that crystallization is initiated at 450°C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 ◦C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).