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Effect of solar cell structure on the radiation resistance of InP solar module

Auteurs : Mazouz Halima, Belghachi Abdrahmane, Moufdi Hadjab, Hassane OUBOUCHOU, Mourad ZERGOUG
Année : 2014
Domaine : Electronique
Type : Communication
Conférence: Conférence Internationale sur le Soudage, le CND et l’Industrie des Métaux, IC-WNDT-MI’14
Résumé en PDF : (résumé en pdf)
Fulltext en PDF : (.pdf)
Mots clés : InP, solar cell, pn and np structure, electron irradiation, output parameters

Résumé :

in this paper effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium phosphide solar cells with very thin emitters. The simulation results show that n/p structure offers a somewhat better short circuit current but that the p/n structure offers improved circuit voltage, not only before electron irradiation but also after 1MeV electron irradiation with 5.1015fluence. The simulation shows also that n/p solar cell structure is more resistance than that of p/n structure.