Fabrication and characterization of pure ZnO thin films deposited by Sol – gel method

Type : Article de conférence
Auteur(s) :  S. Haya, O. Halimi, M. Sebais, B. Boudine, O. BRAHMIA
Année :  2016
Domaine : Sciences des matériaux
Conférence: 7th African Conference on Non Destructive Testing (ACNDT) & the 5th International Conference on NDT and Materials Industry and Alloys (IC-WNDT-MI)
Lieu de la conférence:  Oran, Algeria
Résumé en PDF :  (résumé en pdf)
Fulltext en PDF :  (.pdf)
Mots clés :  Photoluminescence, band gap, ZnO, sol-gel method

Résumé : 

ZnO thin films were prepared via Sol-gel method and were deposited on an ordinary glass substrate using dip coating technique. These films undergo optical annealing using UV irradiation during 2 hours. The starting materials used were zinc acetate dehydrate, 2-methoxyethanol which was used as solvent as well as the mono-ethanolamine (MEA) as stabilizer. Xraydiffraction study shows that all the films prepared in this work have a preferential orientation situated at 34° and correspond to (002) plan of the hexagonal Wurtzite structure, with lattice constants a = b = 3.02 Å, c = 5.20 Å. The optical band gap energy of the thin films was found to be a direct allowed transition ~3.23 eV. These values belong to the blue shift absorbance. Moreover, the photoluminescence measurement reveals that the prepared samples exhibit intense emission band in the visible and near UV. This observation led us to practical applications in the area of optoelectronic.