Chercheur

Teachers Login Form

 

Admin

Pupils Login Form

 



PHOSPHORUS DEACTIVATION PROCESS IN SILICON SUBMITTED TO HYDROGEN PLASMA

Auteurs : D. Belfennache, D. Madi, N. Brihi
Année : 2016
Domaine : Physique
Type : Communication
Conférence: 3rd International Conference on Energy, Materials, Applied Energetics ans Pollution (ICEMAEP'2016)
Résumé en PDF : (résumé en pdf)
Fulltext en PDF :
Mots clés : Active donor profile, Plasma Hydrogenation, hydrogen molecular, phosphorus deactivation, platelets

Résumé :

In this study, we use it in the aim to understand the mechanisms which govern the phosphorus deactivation by hydrogen. To do this, The hydrogenation experiments were carried out in hydrogen plasma generated in an electron cyclotron resonance system (MW-ECR) using microwave power (PMW) for a fixed parameters like hydrogen flux, process time and hydrogenation temperature. The hydrogenation revealed a dopant deactivation due to the formation of phosphorus-hydrogen (PH) bonding as evident from the changes in the doping level after hydrogenation of schottky diode made using FZ-single crystalline silicon. The deactivation of phosphorus was also more pronounced at low microwave plasma power and for samples with low initial phosphorus concentration. On the other hand, the formation of molecular hydrogen below the silicon surface called platelets increase with increasing the initial phosphorus concentration.