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Structural Characterization of TiO2 Thin Films on Aluminum Substrates Obtained by Sol-Gel Process

Auteurs : H. Dehdouh, R. Bensaha
Année : 2013
Domaine : Physique
Type : Communication
Conférence: Premières Journées de Internationales de Physique
Résumé en PDF : (résumé en pdf)
Fulltext en PDF : (.pdf)
Mots clés : Aluminum substrate, TiO2Thin films, anatase

Résumé :

In this work, TiO2 thin films were prepared by dip-coating Sol-Gel process on aluminum substrates. The deposition process allows having layers of good quality (homogeneity, adhesion). The layers thus prepared have undergone annealing at 550 °C for 1\2h and 2h and characterized by different techniques: Differential scanning calorimetric (DSC), X-ray diffraction (XRD), Raman spectroscopy and scanning electronic microscopy (SEM). The DSC curve shows an exothermic peak corresponding to the crystallization of TiO2. XRD and Raman results indicate that TiO2 layers deposited on aluminum crystallize in tetragonal anatase phases of TiO2 by annealing at 550 °C, the grain size depend on the annealing time. Then observing the cavities of TiO2 randomly formed on aluminum by SEM.