Physique
Simulation analysis of a high efficiency GaInP/Si multijunction solar cell
The solar power conversion efficiency of a gallium indium phosphide (GaInP)/silicon (Si) tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures. In particular, to interconnect the bottom and top sub-cells of the monolithic tandem, a gallium arsenide (GaAs)-based tunnel-junction, i.e. GaAs(n+)/GaAs(p+), which assures a low electrical resistance and an optically low-loss connection, has been considered. The J–V characteristics of the single junction cells, monolithic tandem, and mechanically stacked structure have been calculated extracting the main photovoltaic parameters. An analysis of the tunnel-junction behaviour has been also developed. The mechanically stacked cell achieves an efficiency of 24.27% whereas the monolithic tandem reaches an efficiency of 31.11% under AM1.5 spectral conditions. External quantum efficiency simulations have evaluated the useful wavelength range. The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+) tunnel junction. Voir les détails
Mots clés : GaInP/Si, tandem solar cells, power efficiency, numerical simulations
Modelling and performance analysis of a GaN-based n/p junction betavoltaic cell
In this work, we optimized the performance of a gallium nitride (GaN)-based n/p junction betavoltaic cell irradiated by the radioisotope nickel-63 (Ni63). In particular, we developed a lab-made software starting from an analytical model that takes into account a set of fundamental physical parameters for the cell structure. The simulations reveal that, by using a Ni63 radioisotope source with a 25 mCi/cm² activity density emitting a flux of beta-particles with an average energy of 17.1 KeV, the cell performs a conversion efficiency (η) in excess of 26%, thus approaching the theoretical limit for a GaN-based device. The other electrical parameters of the cell, namely the short-circuit current density (Jsc), open-circuit voltage (Voc), and maximum electrical power density (Pmax) are 240 nA/cm², 2.87 V, and 660 nW/cm², respectively. The presented analysis can turn useful for understanding the theoretical background needed to better face GaN-based betavoltaic cell design problems. Voir les détails
Mots clés : analytical modelling, Gallium nitride, betavoltaic cell, nickel-63 radioisotope, radioactivity density
Thermal andlfuid fow modeling oflthelmolten pool behavior duringlTIG welding bylstream vorticity method
The present paper deals with the numerical simulation of weld pool development in Tungsten Inert Gas (TIG) process. A mathematical model is developed in order to solve the Navier–Stokes equations expressed in the stream–vorticity formulation coupled with heat equation taking into account the liquid solid phase change. Using the stream–vorticity formulation in incompressible fuid fow, the same problem is solved with reducing the number of transport equations. Therefore, only one transport equation (vorticity) and one Poisson equation (stream) are considered in this model. The FORTRAN programming and the numerical simulation are then achieved using appropriate discretization that ensures the convergence of the numerical methods to solve a large and sparse linear algebraic systems. Furthermore, to solve the radiation phenomena during welding described by the Stefen law, another method is proposed. Thefobtained numerical results are discussed and validate with experimental. Voir les détails
Mots clés : Thermal and fuid modeling, TIG welding, Stream vorticity, 304L steel, Numerical simulation
Unraveling the effect of Bi2S3 on the optical, electrical and magnetic properties of γ-MnS-based composite thin films
(Bi2S3)x (γ-MnS)1-x composite thin films have been deposited onto glass substrates using spray pyrolysis method. The structural and compositional investigations confirmed the co-existence of Bi2S3 and γ-MnS binary compounds in the thin films. The surface morphology indicated that the increase in Bi2S3 concentration influences both the shape and the size of γ-MnS crystallites. The optical analysis via transmittance and reflectance measurements revealed that the band gap energy Eg decreased from 3.29 eV to 1.5 eV in terms of Bi2S3 content. The electrical parameters such as resistivity ρ, mobility μ, carrier concentrations and Hall coefficient have been obtained by Hall Effect measurements. It is found than incorporation of Bi2S3 enhances the conductivity, and p-type conduction of γ-MnS could be converted to n-type at x = 0.5. The vibrating sample magnetometer measurement has revealed that (Bi2S3)x (γ-MnS)1-x composite thin films have a ferromagnetic behavior at room temperature. Voir les détails
Mots clés : γ-MnS, Bi2S3, Spray pyrolysis, Magnetic Properties
First principal investigation of structural, morphological, optoelectronic and magnetic characteristics of sprayed Zn: Fe2O3 thin films
Undoped and Zn-doped Fe2O3 thin films were grown through spray pyrolysis. Zinc doping effect on the physical properties was investigated in detail. X-ray diffraction analysis confirms that all the Fe2O3 thin films showed a rhombohedral structure. The surface morphological study shows an interesting dendrite structure. The estimated band gaps energies were increased from 2.13 to 2.21 eV for indirect transition and from 1.80 to 1.85 eV for direct transition as function of doping ratio which was increased from 2 to 8 at. % Zn. The resistivity value (ρ) of un-doped Fe2O3 thin film is 6.06 × 104 Ω. cm and as adding Zn ions, ρ consequently decreased to 52 Ω. cm for 6 at. % Zn-doped Fe2O3 thin films. Vibrating sample magnetometer (VSM) measurements showed an increase of the saturation magnetization with the Zn2+ insertion. Further, a ferromagnetic behavior was observed. Voir les détails
Mots clés : Ferromagnetic, semiconductor, Fe2O3, Zinc doping, Low resistivity
Élaboration et caractérisation des matériaux nanostructures à base de Fe et Ni
The aims of this work is to understand the influence of the elaboration method , mill type, milling time and concentration on the structural, microstructural and magnetic properties of Fe80Ni20 nanostructured alloy. The production of the Fe80Ni20nanostructured alloy was carried out by the mechanical alloying technique of iron and nickel powders mixture. The elements produced (elaborated) were characterized by X-ray diffraction techniques (DRX), Scanning Electron Microscope (SEM) and Vibrating Sample Magnetometer (VSM). The X-ray diffraction study confirmed the formation of the Fe-Ni alloy after 600 min of milling with an average crystallite size of 13 nm, while the analysis of the magnetization curves of the Fe-Ni alloys, revealed original magnetic properties: super paramagnetic behavior, and especially saturation magnetization and significant coercitivity. Voir les détails
Mots clés : elaboration method, properties of Fe80Ni20, nanostructured alloy
Analyse de la neutralisation du dopant dans le silicium parl’hydrogène pour une corrélation avec la tension en circuit ouvertmesurée sur des cellules photovoltaïques.
La motivation des recherches entreprises dans cette thèse vise à renforcer les potentialités qu’offrent les films de polysilicium (poly-Si) en couches minces pour des applications photovoltaïques. Pour ce faire, il était d’une importance primordiale de passiver avec l’hydrogène les défauts inter – et intra – grains du poly-Si. Cependant, l’amélioration des propriétés électriques de ces films est accompagnée par une neutralisation des atomes dopants suite à la formation des complexes dopant-hydrogène. En outre, la concentration active du dopant est un paramètre crucial qui peut affecter les propriétés électroniques des dispositifs conçus à base de silicium. Ainsi, l’objectif principal de notre travail est d’analyser la neutralisation du dopant dans le monosilicium par l’hydrogène pour une éventuelle corrélation avec la passivation des défauts dans le poly-Si. En conséquence, des films de silicium monocristallin obtenus par la technique de fusion de zone et dopé uniformément au phosphore ou au bore ont été utilisés pour élaborer respectivement des diodes Schottky ou des jonctions n+p. Ces dernières ont été employées pour explorer la neutralisation des dopants par l’hydrogène en revanche le suivi de l’évolution de la tension en circuit-ouvert mesurée sur des cellules photovoltaïques n+pp+ à base du silicium polycristallin a été dédiée pour l’examen de la passivation des défauts inter – et intra – grains. Par ailleurs, les traitements d’hydrogénation ont été réalisés dans un réacteur Roth & Rau de PECVD du laboratoire ICUBE (ex. INESS) de Strasbourg (France) qui permet de créer des plasmas à décharge micro-onde assistée par la résonance cyclotronique électronique. L’analyse des résultats obtenus montrent que l’introduction de l’hydrogène dans le silicium cause une neutralisation du phosphore et peut même former des molécules de H2. Proche de la surface de silicium, les molécules d’hydrogène forment des platelets et par la suite la diffusion de l’hydrogène en volume s’affaiblit tandis qu’une hydrogénation excessive donne lieu à de nouveau défauts qui dégradent les propriétés électriques en particulier la tension en circuit-ouvert. Egalement, l’hydrogène neutralise le bore dans les jonctions n+p et provoque un gradient de concentration entre la limite de la zone de charge d’espace (ZCE) et la profondeur de la région p. En conséquence, nous avons admis l’existence d’un champ électrique qui encourage une diffusion profonde des atomes d’hydrogène en volume de la région p. A ce stade, un mécanisme de diffusion et de passivation des défauts dans les cellules photovoltaïques n+pp+ en polysilicium a été proposé. Aussi, il a été constaté que la désactivation du dopant s’effectue dans une région électriquement neutre qui agit comme une couche tampons résistive à faible mobilité près de la surface de l’émetteur n+ et proche de la jonction, ce qui entraîne une réduction du nombre de porteurs de charge recombiné à la surface avant et aux bords de la cellule photovoltaïque. C’est pourquoi, la tension en circuit-ouvert s’améliore au fur et à mesure que la concentration du dopant inactif augmente dans les cellules solaires à base du silicium polycristallin. Voir les détails
Mots clés : passivation, plasma, Cellules photovoltaïques, Hydrogénation
Simulation des ondes ultrasonores dans des matériaux anisotropes piézoélectriques :application aux capteurs électroacoustiques à ondes guidées
Ce travail est une étude numérique et expérimentale pour l’optimisation des performancesde dispositifs électroacoustiques destinés à la détection. L’effet des paramètres intrinsèques,tels que l’épaisseur de la couche piézoélectrique, la longueur d’onde acoustique et l’inclinaisondu cristal sur la vitesse de phase, le facteur de couplage électromécanique et la sensibilité auxeffets de masse, a été étudié numériquement. La méthode des éléments finis a été utilisée, dansle cas des modes de Lamb dans le ZnO/SiC, pour développer un capteur de pression et dans lecas des modes de Rayleigh, de Sezawa et de Love dans le ZnO/Si pour le développement d’uncapteur multimode destiné à la détection des liquides et des gaz. L’étude numérique etexpérimentale d’un résonateur à harmoniques élevées HBAR à base de ZnO c-incliné sur le Si confirme la possibilité de réaliser des dispositifs miniaturisés et de hautes performances à basede ZnO c-incliné. Les résultats obtenus sont importants pour la conception et la réalisation de dispositifs électroacoustiques à ondes guidées pour la détection. Voir les détails
Mots clés : ondes acoustiques, Eléments finis, Matériaux anisotropes piézoélectriques, Dispositifs électroacoustiques
Simulation et optimisation du transfert thermique lors du soudage par friction malaxage FSW d’un métal
The Friction Stir Welding (FSW) is an assembling process of parts in the solid phase, without melting the material and without added metal. The basic concept of the FSW process is simple and consists of using a non-consumable rotational tool with a pin and shoulder shaped to provide required weld properties, where the thermal energy is generated by friction among the rotating the different. The aim of this thesis is to propose an optimization strategy using the SQP algorithm (Quadratic Sequential Programming) coupled with 3D transient heat transfer computation were used to improve the FSW process parameters. An optimization method was applied to improve the FSW welding parameters of an AA2195-T8 aluminum-lithium alloy plate. The numerical procedure proposed is based on the optimization of the spatial parameters related to the tool, ie the welding speed, the speed of rotation of the tool, the radius of the shoulder of the tool and the vertical force applied. This study aims to investigate three criteria: the control of the maximum temperature during FSW; the minimization of the HAZ length and finally the reduction of the total welding energy. The numerical study showed good agreement between the results obtained and the existing experimental data. This good agreement between the results of the two approaches would make it possible to use the proposed numerical model to predict the thermal field and the maximum value of the temperature. The optimization process has demonstrated its robustness and the main results obtained are: The optimal operating conditions allow a gain about 38% of consumed energy by FSW and a reduction of 11 % in the welding time; Applying the optimal parameters permits until a 70% decrease in the length of the Heat Affected Zone (HAZ) at every position on the weld line. Voir les détails
Mots clés : Friction Stir Welding (FSW), Heat transfer, finite volume method, SQP algorithm optimization method.
Synthesis and characterization of nickel nanoparticles supported on aluminum oxide
Due to their peculiar qualities, metal-based nanostructures have been extensively used in applications such as catalysis, electronics, photography, and information storage, among others. New applications for metals in areas such as photonics, sensing, imaging, and medicine are also being developed. Significantly, most of these applications require the use of metals in the form of nanostructures with specific controlled properties. The properties of nanoscale metals are determined by a set of physical parameters that include size, shape, composition, and structure. In recent years, many research fields have focused on the synthesis of nanoscale-sized metallic materials with complex shape and composition in order to optimize the optical and electrical response of devices containing metallic nanostructures. In This work, we study nickel nanoparticles supported on aluminum oxide, prepared by impregnation with ionic exchange. In a first stage, the fixing conditions of the nickel precursor on aluminum oxide are optimized. In the second stage, the samples are calcined at temperature (T= 750 °C). Several experimental techniques are used for the characterization of the samples at the various stages of their elaboration (SEM, DRX, and VSM). A change of morphology of the aluminum oxide grains was observed by Scanning Electron Microscope. The X-rays diffraction shows the formations of nanoparticles Al3Ni2 of near size 16.7 nm. The extracted magnetic measurements show the good and the easy magnetization Voir les détails
Mots clés : nanostructures, Ionic exchange, Nickel nanoparticles, calcination